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My work has been cited by several researchers in reputed International journals/Books. I have come across the following  publications which have cited my work. The cited paper is indicated in  red from the List of publications:


BOOKS

47. J. V. Gahn and M. Ostling, "Bipolar Technology", Chapter 3, The VLSI Handbook, Wai-Kai Chen (Ed), IEEE Press, 2000.(IEEE TED Aug 93, IEEE TED Sept 89)
(Two of my papers are cited in this Handbook on collector design optimization)

46. A. Moschwitzer, Semiconductor devices, circuits and systems, Clarendon Press, Oxford, and Oxford University Press New York, 1991.(IEEE TED Sept 89)
(In the above Book, my paper has been cited in a chapter on Bipolar Transistors.)

International Journals

45. S.T. Chang, C.W. Liu, S.C. Lu, "Base transit time of graded-base Si/SiGe HBTs considering recombination lifetime and velocity saturation," Solid-State Electronics, Vol.48, pp 207-215, Feb-2004(Cited IEEE TED Aug 98, IEE Proc. Oct 99)

44. Biswas A, Basu PK, "Modelling of base transit time in Si/Si1-y-z GeyCz/Si HBTs and composition profile design issue for its minimization," SEMICOND SCI TECH 18 (11): 907-913 NOV 2003. (Cited IEEE TED Aug 98)

43. Chiaki T, Kiguchi M, Saiki K, Koma A, " Electrical properties of LiF/Ag(001) heterostructure," JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-
42 (7B): 4713-4715 JUL 2003 (IEEE TR Sept 2002)

42. M.M. Shahidul Hassan, A.H.M.A. Rahim, " Induced base transit time of an epitaxial n+pn-n+ bipolar transistor in saturation" Solid-state Electronics, Vol.47, pp 943-950, June 2003. (IEEE TED Nov 90)

41. Biswas A, Basu PK, "An analytical approach the modelling of intrinsic base sheet resistance in a SiGeHBT and optimal profile design considerations for its minimization," SEMICOND SCI TECH 17 (12): 1249-1254 DEC 2002 (IEEE TED Dec97)

40. Dutta, R.; Thiel, F.; Modeling and characterization of the limits of transistor operation due to quasisaturation," IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2002. Proceedings of the 2002 , 29 Sept.-1 Oct. 2002 Page(s): 53 -56(Cited IEEE TED May 1987)

39. Chan I, Nathan A , "Dry etch process optimization for small-area a-Si : H vertical thin film transistor" J VAC SCI TECHNOL A 20 (3): 962-965 MAY-JUN 2002 (SSE, Oct 95)

38. F. Lin, B. Chen, T. Zhou, B.L. Ooi and P.S. Kooi, " Characterisation and modeling of avalanche multiplication in HBT's" Microelectronics Journal, Vol.33, pp.39-43, January 2002.(Cited IEEE TED Dec 94).

37. A. Zareba, L. Lukasiak, and A. Jakubowski, " Modeling of SiGe base heterojunction bipolar transistor with gaussian doping distribution," Solid-state Electronics, Vol.45, pp.2029-2032, December 2001. (Cited IEEE TED Dec 97)

36. Bolognesi, C.R.; Dvorak, M.M.W.; Yeo, P.; Xu, X.G.; Watkins, S.P.
"InP/GaAsSb/InP double HBTs: A new alternative for InP-based DHBTs " IEEE Transactions on Electron Devices, Vol.48, Pp: 2631- 2639, Iss.11, 2001.(Cited IEEE TED Dec 94).

35. Chang, S.T.; Liu, C.W.; Lin, C.-H.; "Optimum Ge profile design for base transit time minimization of SiGe HBT "Microwave Conference, 2001. APMC 2001. Asia-Pacific , Volume: 1 Page(s): 244 -247, 2001.(Cited IEEE TED Dec 97, IEE Proc. Oct 99)

34. A. Biswas and P. K. Basu, "Calculation of figures of merit of Si/Si1-x-yGexCy/Si HBTs and their optimization," Solid-state Electronics, Vol.45, pp.1885-1889, November 2001. (Cited IEEE TED Dec 97).

33. Suzuki, K., "Optimum base-doping profile for minimum base transit time considering velocity saturation at base-collector junction and dependence of mobility and bandgap narrowing on doping concentration" IEEE Trans. on Electron Devices, vol. 48, p.2102-2107, September 2001.(cited IEEE TED June 01)
( My paper has been cited as improving the previous studies in this area by including the dependence of mobility and bandgap narrowing on doping concentration.)

32. K. H. Kwok and C.R.Selvakumar, "Profile design considerations for minimizing base transit time in SiGe HBTs for all levels of injection before onset of Kirk effect," IEEE Trans. on Electron Devices, vol. 48, p.1540-1549, August 2001.(cited IEEE TED Dec-97)
( My paper has been cited as one of the four important papers in this area by providing a more meaningful comparison of profile design considerations compared to the other publications.)

31. Sakata H , "High-transmittance surface textures formed by plasma etching of metallophthalocyanine films", J APPL PHYS 89 (12): 7711-7715 JUN 15 2001 (Cited SSE, Oct 95)

30. T. Pesic and N. Jankovie, "An analytical model of the inverse base width modulation effect in SiGe graded heterojunction bipolar transistors," Microelectronics Journal, Vol.32, pp.713-718, 2001.(Cited IEEE TED Dec 97).

29. A.N. Bubennikov and A.V. Zykov, " Investigations of impact ionization phenomena in advanced transistors and speed-power improvement of BiMOS SRAM cells based on reverse current effect," Microelectronics Reliability, vol. 41, pp.219-228, February 2001.(cited SSE Dec 96)

28. M.M.S.Hassan, "Characteristics of an epitaxially Schottky barrier diode for all levels of injection," Solid-state Electronics, vol.44, pp.1111-1116, June 2000. (cited IEEE TED Nov 90)

27. P. Palestri, C. Fiegna, L. Selmi, M.S. Peter, G.A.M. Hurkx, J.W. Slotboom and E. Sangiorgi, "A better insight into the performance of silicon BJT's featuring highly nonuniform collector doping profiles," IEEE Trans. on Electron Devices, vol. 47, p.1044, May 2000.(cited IEEE TED Aug 93)
(My paper is cited as one of the two earliest papers on the optimization of the collector doping profile of BJT's)

26. M.M.S.Hassan, "Analytical Base transit time of integrated bipolar transistors in quasi-saturation and hard saturation" IEE Proc.-Circuits, Devices and Systems, vol.147, p.129, April 2000.(Cited IEEE TED May 97)

25. Reddy SV, Pandurangaiah SV, Reddy PN, et al. "Gamma irradiation of platinum- and palladium-related deep levels in silicon" INDIAN J PURE AP PHY 38 (4): 258-262 APR 2000 (Cited PSS(a) Feb 85)

24. Cao, G.J.; De Souza, M.M.; Narayanan, E.M.S.; "Resurfed lateral bipolar transistors for high-voltage, high-frequency applications "Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on , 2000 Page(s): 185 -187 (Cited IEEE TED Aug 93)

23. Mitchell, M.; Nigrin, S.; Cristiano, F.; Ashburn, P.; Hemment, P.; "Characterisation of NPN and PNP SiGe heterojunction bipolar transistors formed by Ge+ implantation," High Performance Electron Devices for Microwave and Optoelectronic Applications, 1999. EDMO. 1999 Symposium on , 22-23 Nov. 1999 Page(s): 254 -259(Cited IEEE TED Aug 98)

22.Y. Wu, J.K.O.Sin, B.Kang, Z.Guo and X.Cheng, "Determination of excess carrier lifetime in the collector region of silicon power bipolar transistors," IEEE Trans. on Electron Devices, Vol.46, p.1782, August 1999.(Cited IEEE TED May 87, IEEE TED Sept 89, IEEE TED Nov 90)
(The above paper reports an improved version of my original method for measuring excess carrier lifetime. Three of my publications are cited in this paper.)

21. Hassan MMS , "Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region" INT J ELECTRON 86 (1): 1-14 JAN 1999 .(Cited IEEE TED May 87)

20. K.K. Ng, M.r. Frei and C.A. King, "Reevaluation of f_t BV_{ceo} limit on silicon bipolar transistors," IEEE Trans. on Electron Devices, vol.45, p.1854, August 1998.(cited IEEE TED Aug 93)
(In this paper, my results are used by the above Bell labs team to reevaluate the fundamental limit on the speed of bipolar transistors.)

19. Wachmann E, "Aspects of submicron BiCMOS technology integration", INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS 27 (4): 239-245 DEC 1997 (cited IEEE TED May 87)

18. H. Beneking, "The collector function in semiconductor devices," IEEE Trans. on Electron Devices, vol.43, p.1416, September 1996.(cited IEEE TED Aug 93)
(This review paper refers to my transistor structure as useful in low-voltage and Kirk effect free applications.)

17. R.Ryter, R.Zingg and WFichtner, "Optimizing high voltage bipolar transistors in a smart power complementary BiCMOS technology," Solid-state Electronics, Vol.39, p.1185, August 1996.(cited IEEE TED Sept 89)

16. Grillot PN, Ringel SA, Fitzgerald EA , "Effect of composition on deep levels in heteroepitaxial GexS1-x layers and evidence for dominant intrinsic recombination-generation in relaxed Ge layers on Si,"J ELECTRON MATER 25 (7): 1028-1036 JUL 1996 (cited PSS(a) Feb 85)

15. D.Decoutere, J. Poortmans, L. Deferm and J.Nijs, "Investigation of the high frequency noise figure reduction in SiGe HBTs using acualised physical models," Solid-state Electronics, Vol.38, p.157, January 1995.(Cited IEEE TED Sept 89)

14. N. Rinaldi, "Modeling of minority carrier transport in non-uniformly doped si regions using asymptotic expansions," IEEE Trans. on Electron Devices, Vol. 40, p.2307, December 1993.(Cited IEEE TED Sept 89)

13. G.V.Persiano, A.G.M.Strollo and P.Spirito, "Effects of epitaxial doping on current characteristics in power BMFETs," Proceedings of European Power Electronics Association, p.40, 1993.(cited IEEE TED Sept 89)

12. P.V.Mieghem, S. Decoutere, G.Borghs and R.P.mertens, "Influence of majority carrier band tails on the performance of semiconductor devices," Solid-state Electronics, vol.35, p.699, May 1992.(cited IEEE TED Sept 89)

11. C. Xu and D. Schroder, "A power bipolar junction transistor model describing static and dynamic behavior," IEEE Trans. on Power Electronics, vol.7, p.734, October 1992.(cited IEEE TED Sept 89)

10. VANMIEGHEM P, DECOUTERE S, BORGHS G, et al. "INFLUENCE OF MAJORITY CARRIER BANDTAILS ON THE PERFORMANCE OF SEMICONDUCTOR-DEVICES " SOLID STATE ELECTRON 35 (5): 699-704 MAY 1992 (cited IEEE TED Sept 89)

9. LIOU JJ , "CURRENT VOLTAGE CHARACTERISTICS OF BIPOLAR-TRANSISTORS INCLUDING QUASI-SATURATION, FINITE COLLECTOR LIFETIME, AND HIGH-LOW JUNCTION EFFECTS" INT J ELECTRON 72 (1): 89-98 JAN 1992 (cited IEEE TED May 87)

8. S.L.Jang and K.L Chern, "Hot carrier induced phtovoltage in silicon bipolar transistors," Solid-state Electronics, vol.34, p.1387, December 1991.(cited IEEE TED Sept 89)

7. N. Shigyo, H, Tanimoto, M. Norishima and S. Yasuda, "Minority carrier mobility model for device simulation," Solid-state Electronics, vol.33, p.727, 1990.(cited IEEE TED Sept 89)

6. C..Xu, "Netzwerkmodelle von Leistungshalbleiter-Bauelementen (Dioen, BJT's and Mosfet's)", PhD Dissertation, Technische Universitat, Munich, Germany 1990.(cited IEEE TED Sept 89)

5. GILL AA, BABER N, IQBAL MZ , "ROLE OF THE MID-GAP LEVEL AS THE DOMINANT RECOMBINATION CENTER IN PLATINUM-DOPED SILICON" J. APPL PHYS 67 (2): 1130-1132 JAN 15 1990 (cited PSS(a) Feb 85)

4. C.H.Xu, and D.Schroder, "A power bipolar junction transistor model describing the static and the dynamic behavior," 20th Annual IEEE Power Electronics Specialists Conference, PESC '89 Record, vol.1, pp.314-321, 1989.(cited IEEE TED Sept 89)

3. YUAN JS, EISENSTADT WR , "CIRCUIT MODELING OF COLLECTOR CURRENT SPREADING EFFECTS IN QUASI-SATURATION FOR ADVANCED BIPOLAR-TRANSISTORS" SOLID STATE ELECTRON 31 (12): 1725-1731 DEC 1988 (cited IEEE TED May 87)

2. POSTNIKOV VS, PRIBYLOVA EI , "BREAKDOWN BEHAVIOR OF PLATINUM SOLID-SOLUTIONS IN SILICON", RUSSIAN METALLURGY (1): 114-116 1987 (cited PSS(a) Feb 85)

1. STOFFLER W, WEBER J "INFLUENCE OF HYDROSTATIC-PRESSURE ON THE PLATINUM LEVELS IN SILICON" PHYS REV B 33 (12): 8892-8895 Part 2 JUN 15 1986 (cited PSS(a) Feb 85)